柳克強 副教授  清華大學工程與系統科學系  
                

 

 

Equipment:

  • High Density Plasma Etcher (300 mm)

Features:

  • Shape-tunable inductive coil (US patent #6,150,763, ROC patent #120459)

  • Wafer size: 150 - 300 mm

  • Etch process: Poly-Si

  • Gases: Cl2, HBr, Ar, N2, O2

  • Process Monitoring tools:            OES, RF impedance meter, 36 GHz Heterodyne Interferometer, PEM Ellipsometer              

 

 

  • Ionized Metal (Cu) Plasma (ICP Enhanced Magnetron Sputtering) System (R709)

Features:

  • High magnetic field strength magnetron design

  • Metal ion/neutral fraction controlled by Inductively coupled plasma (40 MHz RF, CW/pulsed)

  • Wafer size: up to 100 mm

  • Vacuum system:                        1000 l/s Turbo molecular pump  and throttle valve             

  • DC magnetron power: 10 kW

  • ICP RF power:  1 kW,  40 MHz

  • Substrate RF bias :  600 W, 2 MHz

 

  • ICP Etcher (III-V, metal-oxide, in cleanroom of Center for Nanotechnology and Materials)

Features:

  • Inductively Coupled Plasma

  • Wafer size: up to 150 mm

  • Vacuum system:                        1000 l/s Turbo molecular pump  and throttle valve             

  • Source power: 1 kW, 13.56 MHz

  • Bias power:  600 W,  13.56 MHz

  • Gas: Cl2, BCl3, Ar, O2, N2